蔡文龙，bv伟德副教授，2023年毕业于bv伟德，获工学博士学位（导师赵巍胜教授），2022-2023赴瑞典哥德堡大学联合培养（导师Johan Åkerman教授），2023年7月于bv伟德中国官方网站从事博士后研究（合作导师吕卫锋教授），2026年3月入职bv伟德。
主要围绕超低功耗、超高速自旋电子器件开展以下研究方向：
1、自旋信息器件的超快磁动态特性
2、自旋振荡器
3、自旋器件的非传统计算
迄今发表SCI论文50余篇，其中以一作（含共一）/通讯身份在Nature Electronics, Nature Communications, Advanced Materials, Nano Letters, Physical Review B, IEEE Electron Device Letters等国际知名期刊发表20余篇论文。谷歌学术引用超过2400次，H-index为22。授权发明专利10余项，主持国家自然科学基金青年科学基金、博新计划、博士后面上等项目，参与多项国家重点研发计划、国家自然科学基金重大项目等。
Google Scholar主页：https://scholar.google.com/citations?user=OdCtTCUAAAAJ&hl=en&oi=ao
代表性论文如下：（*表示通讯作者，#表示共同第一作者）
[1] Chen Z., Cai W.*, et al. Nanoscale exchange-bias magnetic tunnel junctions enabled memristive synapse and leaky-integrate-fire neuron for neuromorphic computing. Nature Communications, https://doi.org/10.1038/s41467-026-70802-8, 2026. (自旋器件非传统计算)
[2] Wang Z., Cai W.*, et al. Radiofrequency Spintronic Neural Network Enabled by Electrically Modulated Magnetic Tunnel Junctions. Advanced Materials 38.2 (2026): e10319. (自旋振荡器及其非传统计算)
[3] Bai Y.#, Cai W.# et al. Ru/IrMn Interfacial Orbital-to-Spin Conversion for Antiferromagnetic Switching in Magnetic Tunnel Junctions. Nano Letters 25.41 (2025): 14843-14849. (超低功耗自旋信息器件)
[4] Zhu D., Cai W.*, et al. Thermally driven leaky-integrate-and-fire spintronic neurons with stray-field-enabled self-reset for neuromorphic computing. IEEE Electron Device Letters (2025). (自旋器件非传统计算)
[5] Xu Fei, Cai W.*, et al. Time-resolved nanosecond magnetization switching induced by spin-transfer torque for cryogenic memories. Applied Physics Letters 126.23 (2025). (超快磁动态特性研究)
[6] Bai Y., Cai W.#, et al. Current-induced Néel order switching in a W/IrMn heterostructure. Physical Review B 111.18 (2025): 184405. (自旋信息器件)
[7] Cai W., et al. Angular dependent auto-oscillations by spin-transfer and spin-orbit torques in three-terminal magnetic tunnel junctions. IEEE Electron Device Letters 44.5 (2023): 861-864. (自旋振荡器)
[8] Cai W., et al. Spintronics intelligent devices. Science China Physics, Mechanics & Astronomy 66.11 (2023): 117503. (自旋器件非传统计算)
[9] Cai W., et al. Stateful implication logic based on perpendicular magnetic tunnel junctions[J]. Science China Information Sciences, 2022, 65(2): 122406. (自旋器件非传统计算)
[10] Cai W.#, Shi K.#, et al. Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques[J]. IEEE Electron Device Letters, 2021, 42(5): 704-707. (超快磁动态特性研究)
[11] Zhang X.#, Cai W.#, Wang M.#, et al. Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing[J]. Advanced Science, 2021, 8(10): 2004645. (自旋器件非传统计算)
[12] Wang M.#, Cai W.#, Zhu, D.#, et al. Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques. Nature Electronics 1, 582–588 (2018). (超低功耗自旋信息器件)
招生信息：每年招收1-2名硕士研究生，欢迎有器件物理、材料、工艺或人工智能相关背景的同学加入！
